MOSFET输出电容的非线性对振荡频率的影响  

Numeric Analysis of the Influence of MOSFET Output-Capacitance Non-linearity to Oscillating Frequency

作　　者：刘平[1] 刘晓芳[1] 曾波[1] 宋惠娜[1] 

机构地区：[1]郑州大学信息工程学院,河南郑州450052

出　　处：《微计算机信息》2007年第29期258-259,230,共3页Control & Automation

基　　金：国家自然科学基金资助(10275021)

摘　　要：MOSFET的寄生参数会影响振荡器的性能指标。例如:漏极与源极之间的寄生电容(输出电容COSS)的存在会影响振荡器的频率。而且,COSS呈非线性特性。本文独具创新,以MOSFET的寄生电容作为振荡器的谐振电容。在这篇文章中,构造了包含非线性电容的电路等效模型,借助Matlab软件分析了非线性电容COSS对振荡频率的影响。分别获得了振荡频率随输出射频电压幅度变化和随直流电源电压变化的曲线。The parasitic parameter of a MOSFET can influence the performance index of oscillator. For example： the existence of the parasitic capacitance （output-capacitance COSS ） between drain electrode and source electrode can influence the frequency of oscillator.And, COSS has non-linearity property.This paper has originality innovation, and has parasitic capacitance of MOSFET as resonant capacitance of oscillator .In this paper equivalent circuit model containing non-linearity capacitance is structured,and the influence of non-linearity capacitance to oscillating frequency is analyzed with Matlab software.Two curves are obtained separately, one is oscillating frequency as the change of the outout RF voltage amolitude, the other is as the change of dc voltage.

关 键 词：输出电容 非线性 振荡频率 

分 类 号：TN752.2[电子电信—电路与系统]