不同熔体配比InP材料中的缺陷研究  

Various Melt Stoichiometry Conditions Related Defects in InP Materials

作　　者：齐志华[1] 李昌青[2] 孙聂枫[1] 

机构地区：[1]中国电子科技集团公司第13研究所专用集成电路国家重点实验室,石家庄050051 [2]天津大学电子信息工程学院,天津300072

出　　处：《中国电子科学研究院学报》2007年第4期354-359,共6页Journal of China Academy of Electronics and Information Technology

基　　金：国防重点实验室基金项目(9140C0601040602);国家自然基金项目(60276008)

摘　　要：采用原位磷注入合成法在高压单晶炉内分别合成了富铟、近化学配比、富磷的InP熔体,利用液封直拉法(LEC)分别从不同化学计量比条件下的InP熔体中生长InP单晶材料。对材料分别进行了室温Hall,变温Hall的测试。结果表明富磷熔体条件下具有较高浓度的VInH4复合体,富铟熔体条件VInH4的浓度最低。Three kinds of stoichiometric undoped InP melts have been synthesed by phosphorus in situ injection method, and the ingots have been grown from various melts by liquid encapsulated Czochraski （LEC） method. Some samples from these ingots have been characterized by Room temperature Hall Effect and Temperature dependent Hall （TDH） measurements. It is the stoichiometric condition that causes the InP materials to grow from P rich melts higher carrier concentration than that of In rich InP. The result of this work, which shows the influence of stoichiometry on the concentration of VInH4, is also an evidence that the extra donor in LEC InP is hydrogen indium vacancy complex, VInH4. Consequently, the In vacancy concentration of P rich n type material is higher than that of In rich. So, it is relatively easy to detect indium vacancy defect level in P rich InP.

关 键 词：磷化铟 配比 缺陷 

分 类 号：TN304[电子电信—物理电子学]