射频磁控溅射ZnO薄膜的结构和应力特性  

Structure and stress distribution properties of ZnO thin films prepared by RF magnetron sputtering

作　　者：宋学萍[1] 周旭[1] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039

出　　处：《合肥工业大学学报（自然科学版）》2007年第9期1117-1120,共4页Journal of Hefei University of Technology：Natural Science

基　　金：国家自然科学基金资助项目(59972001);安徽省自然科学基金资助项目(01044901);安徽省教育厅科研基金资助项目(2004kj030);安徽省人才专项基金资助项目(2004Z029);安徽省信息材料与器件省级重点实验室资助项目

摘　　要：用JGP560I型超高真空多功能磁控溅射仪在Si(111)衬底上制备了ZnO薄膜。采用X-Ray衍射仪和电子薄膜应力分布测试仪等对其微结构和应力进行了测试分析。研究结果表明,ZnO薄膜具有良好的c轴择优取向;随着薄膜厚度的增加,薄膜中的平均应力减少;膜厚为744 nm时平均应力、应力差均最小,分别为5.973×108Pa、6.159×108Pa,应力分布较均匀。ZnO films deposited on Si（111） substrate were prepared by the magnetron sputtering method. The microstructure and stress distribution of the films were analyzed by the film stress distribution testing instrument and the X-ray diffractometer. The results indicate that the ZnO films possess c-axis preferred orientation. The mean stress in the ZnO films decreases with increasing of film thickness. When film thickness is 744 nm, the stress distribution is more uniform, the mean stress reaches its minimum 5. 973×10^8 Pa, and stress difference attains to its minimum 6. 159×10^8 Pa.

关 键 词：ZNO薄膜 射频磁控溅射 膜厚 微结构 

分 类 号：O484[理学—固体物理]