互连铝通孔电迁移特征及其可靠性研究  

Characterization of Al Via Electromigration in VLSI Interconnection and Its Reliability Research

作　　者：江清明[1] 周继承[1] 杨春晖[2] 章晓文[2] 

机构地区：[1]中南大学物理科学与技术学院,长沙410083 [2]信息产业部电子第五研究所,广州510610

出　　处：《半导体技术》2007年第10期843-846,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60371046)

摘　　要：研究了超大规模集成电路铝互连系统中铝通孔的电迁移失效机理及其可靠性寿命评价技术。试验采用CMOS和BiCMOS两种工艺各3组的铝通孔样品,分别在三个温度、恒定电流的加速条件下试验,以通孔开路为电迁移失效判据,最后得到了在加速条件下互连铝通孔的电迁移寿命,其结果符合标准的威布尔分布,试验准确可行。通过电迁移模型对试验数据进行了拟合,得到了激活能、电流加速因子和温度加速因子,计算出了正常工作条件下通孔电迁移的寿命,完成了对铝通孔电迁移的研究和寿命评价。　The electromigration failure mechanism and its reliability lifetime evaluation of Al via in ULSI interconnect were investigated.The test samples used CMOS and BiCMOS processes were tested separately under the accelerated condition of three different temperatures and constant current.The lifetime of interconnect via under accelerated condition was got according to the failure criterion that via circuit was open,The result is coinsident with Weibull distribution,it proves that the test is right.Test dates were done by electromigration model.The activation energy,current acceleration and temperature acceleration were got,and the via electromigration lifetime under normal work condition was worked out,finally,the via electromigration research and lifetime evaluation were completed.

关 键 词：通孔 电迁移 可靠性评价 加速寿命 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]