S波段30W微波脉冲功率放大器模块设计  

Design of S Band 30 W Microwave Pulse Power Amplifier Module

作　　者：赵夕彬[1] 关富民[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2007年第10期875-877,共3页Semiconductor Technology

摘　　要：介绍了S频段微波脉冲功率放大器模块的设计方法和试验研制过程。利用内匹配技术,采用混合集成电路制作,将四级芯片集成到微型封装的金属密封管壳中,前两级芯片采用GaAsMMIC电路,第三级采用GaAs FET晶体管,末级采用Si双极型晶体管完成功率放大,结合了GaAs器件电路和Si器件电路的各自优点。在S波段、带宽300 MHz频率范围内试制出Gp≥45 dB,Po≥30 W的功率放大器模块,模块的体积为27 mm×18.5 mm×5 mm。The design method and the process of microwave pulse power amplifier module in S band were presented. Some chips were integrated into a miniature metal closed-package by means of the technique of hybrid integrated circuit and the technique of intermatching. The power amplifier module is achieved in S band and 300 MHz frequency, the gain is over 45 dB, output power is over 30 W, and the module size is 27 mm×18.5 mm×5 mm.

关 键 词：混合集成电路 内匹配 模块 功率放大 

分 类 号：TN722.75[电子电信—电路与系统]