GaS/GaAs界面电学性质研究  

STUDIES OF ELECTRONIC PROPERTIES OF GaS/GaAs INTERFACE

作　　者：陈溪滢[1] 丁训民[1] 张胜坤[1] 张博 陆方 曹先安[1] 朱炜 侯晓远[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室

出　　处：《物理学报》1997年第3期612-617,共6页Acta Physica Sinica

基　　金：国家自然科学基金和国家杰出青年科学基金资助的课题

摘　　要：报道了微波放电法在ＧａＡｓ表面生长ＧａＳ薄膜．用电容电压法（ＣＶ）、伏安法（ＩＶ）以及深能级瞬态谱（ＤＬＴＳ）等测试手段对ＧａＳ／ＧａＡｓ界面的电学性质进行了研究．ＧａＳ／ＧａＡｓ界面的ＣＶ特性反映此处的界面特性比较好，界面态密度约为１０１２／（ｃｍ２·ｅＶ）．ＤＬＴＳ的测试得到了与其一致的结果．另外，从ＩＶ曲线中漏电流的大小。A novel passivation film on GaAs surface has been grown by microwave sulfur glow discharge technique.Electronic properties of GaS/GaAs interface have been studied by C V,I V, and DLTS measurements. C V measurement shows that the properties of GaS/GaAs interface are nearly ideal and interface state density is about 10 12 /(cm 2·eV),which agrees with result from DLTS measurement.From leak current of MIS′s structure in I V spectra,the resistivity of GaS is estimated about 10 11 Ω·cm.

关 键 词：砷化镓器件 硫化镓 界面电学性质 薄膜 

分 类 号：O484.42[理学—固体物理]