提拉法单晶炉室与抽真空充气系统  

Crystal growing furnace hearth for CZ technique application and its evacuating-charging system

作　　者：高利强[1] 原洛渭[1] 

机构地区：[1]西安理工大学,陕西西安710048

出　　处：《真空》2007年第5期52-54,共3页Vacuum

摘　　要：炉室是单晶炉的中心环节,内置坩埚、晶体材料、加热系统和保温罩等。直拉法是在半导体领域中应用最广,产量最大的单晶制备方法。本文以提拉法单晶炉为例先介绍不同于其它设备的各种炉室结构、形状及原因,指出有关的附属结构。然后根据压力的不同对炉室进行了分类。最后详细论述了抽真空充气系统的综合方法及工作原理。Crucible, crystalline material, heating system and hot top are all placed in the hearth of a crystal growing furnace. The CZ（Czochralski） technique is a process widely applied to monocrystal pulling with most output for semiconductor preparation. Describes the crystal growing furnace in combination with CZ technique, including various hearth constructions, shapes and working principle, which are all different from other furnace hearths, as well as its supporting facilities. Then, the furnace hearths are classified according to pressure, with their evacuating charging systems and its working principle discussed in detail.

关 键 词：单晶炉 直拉法 炉室 真空与充气系统 

分 类 号：TB751[一般工业技术—真空技术]