溅射SiO_2薄膜的电气性能  

Electrical Performance of Sputtering an SiO_2 Thin-film

作　　者：孙承松[1] 李云鹏[1] 

机构地区：[1]沈阳工业大学电子系,110023

出　　处：《传感器世界》1997年第4期9-11,共3页Sensor World

摘　　要：本文介绍了一种在金属弹性体和应变电阻之间制作SiO_2绝缘膜的方法,并对基底表面状况,溅射条件对SiO_2膜绝缘性能的影响做了实验研究 实验结果表明,在良好的基底表面,合适的基底温度和调谐偏压下可制备出性能良好的SiO_2膜.The paper introduces the method of fabricating an SiO2 insulator film between a strain resistance and a metal elastic body. Meanwhile, we have made two aspects of research. One is the appearance of substrate surface, the other is that sputtering condition affects electric performance of SiO2 insulator film. Experimental results show: superper-formance SiO2-film can be fabricated on condition of good substrate surface, appropriate substrate temperature and tuning bias voltage.

关 键 词：溅射 电气性能 二氧化硅薄膜 

分 类 号：TN304.21[电子电信—物理电子学] TN305.92