GaAs　MESFET在抗辐射领域的应用  

GaAs MESFETs for Use in Radiation Hardening

作　　者：高剑侠[1,2] 林成鲁[1,2] 严荣良[1,2] 

机构地区：[1]中国科学院上海冶金研究所 [2]中国科学院新疆物理研究所

出　　处：《微电子学》1997年第2期107-114,共8页Microelectronics

摘　　要：详细论述了多种辐照源辐射ＧａＡｓＭＥＳＦＥＴ器件和电路产生的ＳＥＵ（单粒子翻转）效应，辐照源包括脉冲激光、质子、中子和电子束等。同时还讨论了计算机模拟辐射产生ＳＥＵ的过程和机制。研究表明：１）在低温生长ＧａＡｓ阻挡层的ＭＥＳＦＥＴ电路，有较强的抗ＳＥＵ能力；２）在ＭＥＳＦＥＴ中，产生ＳＥＵ的原因在于辐射导致了漏极收集电荷的增加，而且，电荷收集增强机制有三种：ａ）背沟道导通机制，ｂ）双极增益机制。The single event upset(SEU) effects in GaAs MESFET devices and circuits irradiated by laser pulse,proton,neutron and electron beams are described. The process and mechanism of SEU effects generated by computer simulated irradiation are discussed. It is demonstrated that (1) MESFETs fabricated on low temperature grown GaAs buffer layers have strong immunity to SEU effects,and (2) SEU effects in MESFETs are caused by the increase in charge collection at drain junction due to irradiation,for which 3 mechanisms are responsible:a)back channel turn on,b)bipolar gain and c)ion shunt.

关 键 词：MESFET 辐射加固 SEU 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]