r面蓝宝石衬底上采用两步AlN缓冲层法外延生长a面GaN薄膜及应力研究  

Growth and Stress Analysis of a-Plane GaN Films Grown on r-Plane Sapphire Substrate with a Two-Step AlN Buffer Layer

作　　者：颜建锋[1] 张洁[1] 郭丽伟[1] 朱学亮[1] 彭铭曾[1] 贾海强[1] 陈弘[1] 周均铭[1] 

机构地区：[1]中国科学院物理研究所北京凝聚态物理国家实验室,北京100080

出　　处：《Journal of Semiconductors》2007年第10期1562-1567,共6页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:10474126;10574148);国家高技术研究发展计划(批准号:2006AA03A107;2006AA03A106);国家重点基础研究发展规划(批准号:2002CB311900)资助项目~~

摘　　要：采用MOCVD技术在r面蓝宝石衬底上采用两步AlN缓冲层法外延制备了a面GaN薄膜.利用高分辨X射线衍射技术和Raman散射技术分析了样品的质量以及外延膜中的残余应力.实验结果表明:样品的(11■0)面的X射线双晶摇摆曲线的半峰宽仅为0.193°,Raman光谱中E2高频模的半峰宽仅为3.9cm-1,这些说明a面GaN薄膜具有较好的晶体质量;X射线研究结果表明样品与衬底的位相关系为:[11■0]GaN‖[1■02]sapphire,[0001]GaN‖[■101]sapphire和[■100]GaN‖[11■0]sapphire;高分辨X射线和Raman散射谱的残余应力研究表明,采用两步AlN缓冲层法制备的a面GaN薄膜在平面内的残余应力大小与用低温GaN缓冲层法制备的a面GaN薄膜不同,我们认为这是由引入AlN带来的晶格失配和热失配的变化引起的.a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapor deposition with a two-step AlN buffer layer. High-resolution X-ray diffraction and micro-Raman scattering were used to analyze the residual strain and crystalline quality of the as-grown samples. The on-axis full width at half maximum value （FWHM） of the X-ray rocking curve is 0. 193°,and the FWHM of the E2-high energy peak is 3. 9cm^-1,indicating that the as-grown sample is of high quality. The orientation of the a-plane GaN with respect to r-plane sapphire substrate is confirmed to be [11-↑20]GaN ｜｜ [1-↑102]sapphire, [0001]GaN ｜｜[-↑1101]sapphire and [-↑1100]GaN ｜｜ [11-↑20]sapphire. The residual stress of the a-plane GaN grown with two- step AlN buffer is different from that of the a-plane GaN grown with a low-temperature GaN buffer,due to the effects of the AlN buffer,which has a larger thermal mismatch to sapphire than that of GaN.

关 键 词：GaN 非极性 X射线衍射 RAMAN谱 残余应力 

分 类 号：TN304.05[电子电信—物理电子学]