分散剂对铜CMP材料去除率和表面粗糙度影响的实验研究  

Experimental Study on Influences of Dispersant on Material Removal Rate and the Surface Roughness of Cu CMP

作　　者：李庆忠[1] 金洙吉[1] 张然[1] 康仁科[1] 郭东明[1] 

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室

出　　处：《润滑与密封》2007年第3期70-72,109,共4页Lubrication Engineering

基　　金：国家自然科学基金重大项目(50390061);中国博士后科学基金资助项目(20060390984);国家杰出青年科学基金资助项目(50325518)

摘　　要：使用5种分散剂,SiO2水溶胶为磨料、H2O2为氧化剂,分别进行抛光实验。结果表明:二乙烯三胺和吡啶2种分散剂相对较好,二乙烯三胺(质量分数0.05%)对铜的材料去除率达到570.20nm/min,表面粗糙度为Ra1.0760nm,吡啶(质量分数0.75%)的材料去除率为373.69nm/min,表面粗糙度为Ra1.5776nm;二乙烯三胺提高了抛光液的碱性并增强了对铜金属的腐蚀作用是材料去除率提高的主要原因,其多胺基的极性吸附和与胶体分子羟基的化学键作用提高了抛光液磨粒胶体表面的zeta电位,较大的分子链有效地提高了磨料粒子间的空间排斥力,故较好的纳米磨料粒子分散性使抛光表面粗糙度降低。The polishing experiments were presented respectively, in which 5 kinds of dispersants were used, a silica sol was used as the abrasive and H2O2 was used as the oxidizer. The results of experiment indicate that the dispersant diethylenetriamine（ mass fraction 0. 05% ） can arrive at the material removal rate of 570.20 nm/min on copper and the surface roughness can rise up to 1. 076 0 nm, the dispersant rate of 373.69 nm/min and the surface roughness can pyridine （ mass fraction 0.75 % ） can arrive at the material removal rise up to 1. 577 6 nm. The major reason of the material removal rate increasing is that the alkalescence of the slurry with diethy）enetriamine is increased and eroding effect for copper is heightened. Because of polarity adsorption of polyamine amidocyanogen and the effect of chemical bond of polyamine amidocyanogen with hydroxyl of colloid molecule, zeta-potential in the surface of slurry abrasive particles is raised, the space repelling force among abrasive particles is increased efficiently by larger molecular chain, thus the polishing surface roughness is reduced by the better decentralizing effect of nanometer abrasive particle.

关 键 词：CMP 分散剂 铜 去除率 粗糙度 

分 类 号：TN405[电子电信—微电子学与固体电子学]