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作 者:刘红梅[1] 赵全亮[2] 段中夏[2] 邱成军[3] 曹茂盛[2]
机构地区:[1]哈尔滨工程大学材料科学与工程系,哈尔滨150001 [2]北京理工大学材料科学与工程学院,北京100081 [3]黑龙江大学集成电路重点实验室,哈尔滨150001
出 处:《哈尔滨工业大学学报》2007年第9期1499-1502,共4页Journal of Harbin Institute of Technology
摘 要:研究了一种用于制备硅基压电悬臂梁的PZT厚膜溶胶-凝胶工艺.该工艺通过采用交替旋涂法,将PZT溶胶与PZT纳米粉混合形成浆料,再和澄清PZT溶胶交替涂覆在Au/Cr/SiO2/Si的硅基悬臂梁结构上,当达到所需的厚度后再进行热处理.实验证明,热处理温度在650℃,处理时间15 min时,XRD结构表征显示PZT厚膜获得钙钛矿相结构,SEM中厚膜断面清晰,表面紧密、均匀、平整.铁电性能测试表明矫顽场为50kV/cm,饱和极化强度为54μC/cm2,剩余极化强度为30μC/cm2.同时,硅基悬臂梁结构采用典型的半导体光刻工艺,利用BHF/HCl溶液成功地刻蚀了PZT厚膜,并运用微机械加工技术刻蚀出硅悬臂梁结构.A sol-gel technology which was used to fabricate PZT thick film for cantilever beam was investigated. After PZT filtered sol and sol suspension with PZT nano - powders prepared respectively, they were spun alternately on an Au/Cr/SiO2/Si substrate, and then pyrolyzed and annealed to form PZT crystalline phase films. Above process was repeated in order to deposit the desired thickness. The XRD results show that the perovskite PZT thick film is obtained after annealing at 650 ℃ for 15 min. The cross section is clear and surface is dense, homogeneous and smooth. The film has the saturation polarization of 54μC/cm^2, the remnant polarization of 30μC/cm^2 and the coercive field of 50 kV/cm. The cantilever beam was fabricated by micromaching technology and the PZT thick film was etched by BHF/HCl solutions.
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