Transient and Stationary Simulations for a Quantum Hydrodynamic Model  

作　　者：胡新 唐少强 

机构地区：[1]LTCS, Department of Mechanics and Aerospace Engineering, College of Engineering, Peking University, Beijing 100871

出　　处：《Chinese Physics Letters》2007年第6期1437-1440,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 90407021, and the NCET Programme of Ministry of Education of China.

摘　　要：The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.

关 键 词：ENERGY-TRANSPORT SEMICONDUCTORS EQUATIONS EQUILIBRIUM 

分 类 号：O47[理学—半导体物理]