激光辐照下GaAs表面腐蚀液滴自然浸润过程及其边缘刻蚀特性  

Etching droplet soaking and etching character on surface of GaAs under laser irradiation

作　　者：田骁[1] 叶玉堂[1] 刘霖[1] 陈镇龙[1] 罗颖[1] 王昱琳[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054

出　　处：《激光杂志》2007年第4期58-59,共2页Laser Journal

基　　金：国家自然科学基金(批准号:60277008);教育部重点项目(项目号:03147);国防科技重点实验室基金项目(项目号:9140C1406020708)预研基金项目(项目号:9140A01020507DZ0215)

摘　　要：研究了激光辐照下GaAs表面酸性腐蚀液滴的浸润及其腐蚀特性,实验获得了激光辐照下H_2SO_4-H_2O_2液滴在GaAs表面的浸润过程以及液滴边缘方位、晶体取向等差异对GaAs半导体表面刻蚀效果的影响,得到了有价值的结论。实验结果表明,腐蚀液液滴在GaAs表面随着时间向外扩散,腐蚀现象由中心向四周逐渐减弱,并在边缘部分出现不完全腐蚀现象;通过对同一液滴的不同位置的边缘进行观察发现液滴边缘的腐蚀图样不完全相同,由于晶体的各向异性使腐蚀图样具有明显的方向性,此结论对半导体器件的加工工艺起着重要的理论补充作用。The diffusing and etching characters of an acidic drop, which is on the GaAs wafer, under laser irradiation, are described. Diffusing process of H2SO4 - H2O2 drop, and effects of drop edge position and crystal anisotropy are observed. Eventually a valuable outcome has been obtained. Experimental results show that etching - drop diffuse on the surface of GaAs, phenomenon of etching weaken from center to edge and phenomenon of incompletion - etching appear in the edge; through watching different position of a same drop , different phenomenon of etching in the edge has been found. Because of crystalline anlsotropy, the images of etching have direction clearly. The theory play a important role in technics of semiconductor processinz.

关 键 词：GAAS 浸润 刻蚀 边缘特性 

分 类 号：TN249[电子电信—物理电子学]