脉冲激光沉积SrBi_2Ta_2O_9铁电薄膜电容特性研究  

PULSE EXCIMER LASER DEPOSITION AND CHARACTERIZATION OF SrBi 2Ta 2O 9 FERROELECTRIC CAPACITORS

作　　者：杨平雄[1] 郑立荣[1] 倪如山 林成鲁[1] 

机构地区：[1]中国科学院上海冶金研究所信息功能材料国家重点实验室

出　　处：《功能材料与器件学报》1997年第2期148-152,共5页Journal of Functional Materials and Devices

摘　　要：用ＰＬＤ方法成功地制备了ＳＢＴ铁电薄膜，并制作成Ｐｔ／ＳＢＴ／Ｐｔ薄膜电容器。ＳＢＴ薄膜的晶面取向以（００８）和（１１５）为主。在５Ｖ电压下，极化反转，并且得到较饱和的电滞回线，剩余极化强度和矫顽电场分别为８４μＣ／ｃｍ２和５７ｋｖ／ｃｍ。ＩＶ特性测试显示两个对称的双稳峰，并得到零电压下，面积为３１４×１０４μｍ２，厚度为０３５μｍ的电容器，电容约为５６０ｐＦ，介电常数约为６００。疲劳测试表明Ｐｔ／ＳＢＴ／Ｐｔ具有优良的抗疲劳特性。The perovskite-like SrBi 2Ta 2O 9 thin films have been successfully deposited on Pt-coated silicon substrate by pulse excimer laser deposition The dominant orientation of SBT thin films was (008) and (115) Polarization was reversed under 5V, and well-saturated hysteresis loop was obtained; P r and E c were 8 4 μC/cm 2 and 57 kV/cm, respectively The I-V curve of Pt/SBT/Pt showed symmetric bistable peak capacitance and dielectric constant at zero applied voltage for a capacitor with area 3 14×10 4μ m 2 and thickness 0 35μm were about 560pF and 600, respectively Fatigue endurance of the Pt/SBT/Pt capacitor was excellent

关 键 词：脉冲激光沉积 铁电薄膜 电容特性 

分 类 号：TN304.904[电子电信—物理电子学]