中子在硅中能量沉积的Monte Carlo模拟  

A Monte Carlo Study of the Energy Deposition of Neutrons in Silicon

作　　者：陈世彬[1] 

机构地区：[1]西安工业大学数理系,西安710032

出　　处：《西安工业大学学报》2007年第4期360-362,共3页Journal of Xi’an Technological University

摘　　要：不同的半导体器件对高能中子在半导体材料中的电离能量沉积和非电离能量沉积的响应规律不同,研究半导体器件的辐射损伤需要首先研究其材料的损伤.在现有中子截面数据库和粒子与物质相互作用的理论基础上,利用中子输运的Monte Carlo模拟方法,提出了1MeV中子电离能量损失和非电离能量损失的模拟方法,编程计算了1 MeV中子在硅中电离能量损失和非电离能量损失的大小和分布,以及初始反冲原子的平均能量等.计算结果与文献基本符合,表明该方法是可行的.对进一步研究器件的辐射损伤效应奠定了基础.Responses on the neutrons ionizing energy loss（IEL） and non-ionizing energy loss（NIEL） are entirely dissimilar for different semiconductor devices.To study radiation damage of the devices,the study of its material is in need firstly.Based on existing cross-section data,unified theories and Monte-Carlo simulation method,a method of calculating IEL and NIEL for neutrons in silicon was presented in this paper.The amount of IEL ＆ NIEL,their distribution and the mean energy of primary knock-down atoms induced-by 1MeV neutrons were obtained.The results were satisfied in comparison with that of literatures,which proved the method feasible.The foundation for the farther study of semiconductor devices has been provided.

关 键 词：中子损伤 计算机模拟 蒙特卡罗 能量沉积 

分 类 号：O472[理学—半导体物理]