亚65nm及以下节点的光刻技术  

Lithography Technology for Sub-65nm Nodes and Beyond

作　　者：徐晓东[1] 汪辉[1] 

机构地区：[1]上海交通大学微电子学院,上海200240

出　　处：《半导体技术》2007年第11期921-925,共5页Semiconductor Technology

基　　金：上海市浦江人才计划项目(05PJ14068)

摘　　要：由于193 nm浸入式光刻技术的迅速发展,它被业界广泛认为是65 nm和45 nm节点首选光刻技术。配合双重曝光技术,193 nm浸入式光刻技术还可能扩展到32 nm节点,但是光刻成本会成倍增长,成品率会下降。随着ASML在2006年推出全球第一款EUV曝光设备,人们纷纷看好EUV技术应用到32 nm及以下节点,但是它仍需克服很多技术和经济上的挑战。对于22 nm节点,电子束直写是最可行,成本最低的候选方案,业界将在它与EUV技术之间做出抉择。193 nm immersion lithography is widely accepted as the first choice for getting to 65 nm and 45 nm nodes. Combining with double exposure, it would be even extended to 32 nm node with the cost increasing and yield decreasing. After ASML developed its first EUV demo tool in 2006, most IC manufactories believe that EUV lithography will be introduced into 32 nm and even beyond, but it still faces a lot of technical and economical challenges. For 22 nm node, E-beam direct writing is the most feasible and the least expensive, and industry will make a decision between it and EUV.

关 键 词：亚65nm 浸入式光刻 极紫外线 电子束直写 分辨率增强技术 

分 类 号：TN305.7[电子电信—物理电子学]