脉冲偏压对TiAlN/TiN多层膜生长及熔滴的影响  

Influence of DC pulse-bias on growing processes and droplets of TiAlN/TiN coating

作　　者：宫永辉[1] 毛延发[2] 唐卫国[3] 刘金良[3] 冯博学[3] 韩培刚 

机构地区：[1]深圳大学机电与控制工程学院,深圳518060 [2]西安建筑科技大学冶金工程学院,西安710055 [3]兰州大学物理科学与技术学院,兰州730000 [4]深圳市广大纳米工程技术有限公司,深圳518172

出　　处：《深圳大学学报（理工版）》2007年第4期410-413,共4页Journal of Shenzhen University(Science and Engineering)

基　　金：深圳大学科研启动基金资助项目(200536)

摘　　要：针对直流脉冲负偏压对PVD涂层形成过程和熔滴造成很大影响的问题,通过施加脉冲偏压有利于实现低温沉积.研究发现,沉积速率随直流脉冲负偏压峰值的提高先升高后降低,在-300V偏压时沉积速率最大;熔滴密度和直径随脉冲负偏压峰值的提高递减;随偏压升高,加大了元素溅射产额的差异,使涂层中铝元素和钛元素的含量发生变化.Multi-arc ion plating is widely used to deposit hard coatings. The effect of the DC pulse-bias on the growing processes and the droplets is considerable. The research shows that the depositing rate increases at first and then decreases as the peak value of negative DC pulse-bias increases gradually. The maximum rate locates at -300 V. The density and diameter of droplets formed during the coatings growing become low and small when the pulse-bias increases. The ratio of titanium and aluminum in the coatings will change, and the low temperature deposition will become easy as the negative pulse-bias is employed.

关 键 词：脉冲偏压 TiAlN/TiN膜 生长过程 熔滴 多弧离子镀 

分 类 号：TB43[一般工业技术]