实际应用条件下Power MOSFET开关特性研究(上)  

Research on the Switching Property of Power MOSFET under Practical Application Conditions(Ⅰ)

作　　者：张元敏[1] 方波[1] 蔡子亮[1] 

机构地区：[1]许昌学院电信学院,河南许昌461000

出　　处：《现代电子技术》2007年第21期175-178,共4页Modern Electronics Technique

基　　金：河南省科技攻关计划项目(072102240033)

摘　　要：针对实际应用中Power MOSFET开关工作状况与现有文献的描述有很大不同,使用不当易造成器件的损坏和设备的崩溃这一现象,在应用条件下对Power MOSFET开关特性进行了研究,深入分析了Power MOSFET的开关过程,提出了关于开关过程四阶段的新观点,并采用对开关过程的等效输入电容进行分段线性化的新方法对不同阶段的开关参数进行了计算,搭建了开关特性实验电路,实验结果表明,提出的Power MOSFET开关过程四阶段的新观点是正确的,等效输入电容分段线性化的新方法是合理的。The operating condition of Power MOSFET in practical applications is very different from the descriptions in current documents, and misemploy of Power MOSFET easily results in device damage and equipment breakdown, so the switching property of Power MOSFET is studied as viewed from practices. The switching processes of Power MOSFET are analyzed in depth,and a new view about the four periods of switching process is put forward. The parameters in the processes of turning on and turning off during different stages are calculated using partition linearization for the equivalent input capacitances. An experiment on switching property of Power MOSFET is made, and its results show that the new theory and calculation on switching processes of Power MOSFET are valid. The method of analysis and calculation is helpful for proper usage of power MOSFET and design of driving circuit.

关 键 词：POWER MOSFET 开关特性 开通 关断 密勒效应 

分 类 号：TN386[电子电信—物理电子学]