磁控溅射状态三个参数理论分析  

THE ANALYSIS ON MAGNETIC FIELD,ELECTRIC FIELD AND DEGREE OF VACUUM FOR MAGNETRON SPUTTERING

作　　者：常学森[1] 巴德纯[1] 刘坤[1] 李飞[1] 张健[1] 

机构地区：[1]东北大学真空与流体工程研究中心,辽宁沈阳110004

出　　处：《真空与低温》2007年第3期178-182,共5页Vacuum and Cryogenics

摘　　要：应用了宏观统计学的理论,以矩形平面磁控溅射靶为例,分析了在不同的磁场、电场和真空度的条件下,保持磁控溅射靶的工作状态,以及实现高质量磁控溅射薄膜的优化条件。通过分析表明,磁控溅射的磁场、电场与真空度存在着密切的关系,在磁控溅射中为了获得原子理想的沉积状态,必须对磁场、电场与真空度的参数进行合理的设定。三者参数的设定必须遵循其内在的关系和规律。Macro statistics theory is applied. Rectangle plane magnetron sputtering target is taken as an example to analyze the method to keep the target＇s functional model well and optimization condition to get high quality magnetron sputtering thin film under different magnetic field, electrical field and vacuum degree conditions. It indicates that an affinity exists among the magnetron field, electrical field and vacuum degree. For gaining perfect atomic deposition phase through Magnetron Sputtering, the parameters of magnetron field, electrical field and vacuum degree have to be set properly. The parametric setting of magnetron field, electrical field and vacuum degree has to follow intrinsic rides and relations of them.

关 键 词：磁控溅射 电场强度 磁场强度 压力 

分 类 号：TN305.92[电子电信—物理电子学]