RF-S01建模：一种精确的体接触RF-LDMOSFET大信号模型  

RF-SOI Modeling:An Accuracy Body-Contact RF-LDMOSFET Large-Signal Model

作　　者：刘军[1] 孙玲玲[1] 李文钧[1] 钟文华[1] 吴颜明[1] 何佳[1] 

机构地区：[1]杭州电子科技大学微电子CAD所,杭州310037

出　　处：《Journal of Semiconductors》2007年第11期1786-1793,共8页半导体学报（英文版）

摘　　要：提出一种精确的体接触RF-SOI(radio frequency silicon-on-insulator)LDMOSFET(lateral double diffusedMOSFET)大信号等效电路模型.模型漏电流及偏置相关电容模型方程连续、任意阶次可导.发展出一种新的可满足电荷守恒栅源、栅漏电容模型.对漂移区电阻以及LDD(lightly doped drain)区下侧寄生效应偏置相关特性进行了考虑.对自热效应引起的热功率耗散以及跨导/漏导频率分布效应也作了考虑.模型最终应用到一20栅指(每指尺寸为长L=1μm,宽W=50μm)体接触高阻SOI RF-LDMOSFET建模中.测量和仿真所得I-V,S参数,谐波功率特性对比结果验证了模型具有良好的精度.An accuracy large-signal equivalent circuit model of radio frequency silicon-on-insulator （RF-SOI） lateral double diffused MOSFET （LDMOSFET） with body-contact is presented. Both the equations for channel current and bias-depend- ence capacitors modeling are continuous and high order drivable. A new charge conservative expression is developed. The bias dependences of the drift resistor, parasitic resistor, and capacitor under the lightly doped drain region are considered. The power dissipation caused by self-heating and the frequency distribution of the transconductor are described. The model is fi- nally used to construct a 20-gate-fingers （channel mask length, L = 1μm, finger width, W = 50μm） RF-SOI LDMOSFET on high resistivity SOl with body-contact device modeling. Comparison results of the measured and simulated DC, S-parameters, and power characteristics are supplied to demonstrate the excellent accuracy of the model.

关 键 词：RF-SOI LDMOSFET 体接触 大信号模型 可导 谐波功率 

分 类 号：TN386.1[电子电信—物理电子学]