氮化铝薄膜光学常数和结合力测试分析  

Optical Constant and Coalescent Strength Measurements on AlN Thin Film

作　　者：杨清斗[1] 刘文[1] 王质武[1] 卫静婷[1] 

机构地区：[1]深圳大学光电子学研究所广东省光电子器件与系统重点实验室

出　　处：《硅酸盐通报》2007年第5期935-938,979,共5页Bulletin of the Chinese Ceramic Society

基　　金：留学回国人员科研启动基金(教外司留2001-498)

摘　　要：用直流磁控溅射方法在硅衬底上制备氮化铝薄膜。X射线衍射仪和X射线光电子能谱仪分析了薄膜的结构和成分;椭圆偏振仪测量并拟合获得AlN薄膜在250～1000nm波长范围内的折射率和消光系数曲线;利用大荷载划痕仪的声发射谱检测方法并结合不同压力下的划痕显微形貌观察得到薄膜临界载荷(结合力)L为29.45N。Aluminum nitride thin film was deposited on Si substrate by using a reactive DC magnetron sputtering system. Structure and component of the AlN film were studied by X-ray diffraction and X-ray, photoelectron spectroscopy corresponding. Optical constants （refractive index and extinction coefficient） of AlN film were obtained from the spectroscopic ellipsometry study in the wavelength range of 250- 1000nm. The acoustic emission curve and the scratching micrographs with different force were confirmed that the critical load Lc（ coalescent strength） of the AlN film-Si substrate is 29.45N.

关 键 词：氮化铝薄膜 椭圆偏振仪 消光系数 划痕仪 结合力 

分 类 号：O484[理学—固体物理]