探针游移对方形四探针测试仪测量硅片薄层电阻的影响分析  

An Analysis of Affection upon Measuring Results Arising from the Wander of Probes by Four-Point Square Probe Instrument

作　　者：苏双臣[1] 刘新福[2] 张润利[2] 刘金河[2] 

机构地区：[1]河北工业大学廊坊分院,河北廊坊065000 [2]河北工业大学,天津300130

出　　处：《北华航天工业学院学报》2007年第5期35-37,共3页Journal of North China Institute of Aerospace Engineering

基　　金：河北省科学技术研究与发展计划项目(06213544);河北省教育厅科学研究计划项目(2006449)

摘　　要：分析方形四探针探针游移对其测量微区薄层电阻的影响,完成了测试薄层电阻的公式的推导,对游移后产生的误差影响进行了统计数据分析,得出了测试结果满足测试误差要求的结论。The influence of four-probe square probe vacillation is analyzed to the micro area sheet resistance. Inferential reasoning formula has been completed for the measurement sheet resistance. The statistical data is analyzed to the error influence by the wander of the four point square probe. The conclusion is obtained that the test result satisfies the test error request.

关 键 词：硅片 薄层电阻 四探针方法 探针游移 测试误差 

分 类 号：TN407[电子电信—微电子学与固体电子学]