铂扩散工艺对硅快恢复二极管特性的影响  

Influence of spin-on platinum diffusion technique on properties of fast recovery diodes

作　　者：曾祥斌[1] 孙树梅[1] 袁德成 蒋陆金 

机构地区：[1]华中科技大学电子科学与技术系 [2]上海美高森美半导体有限公司

出　　处：《华中科技大学学报（自然科学版）》2007年第9期73-76,共4页Journal of Huazhong University of Science and Technology(Natural Science Edition)

摘　　要：采用直拉单晶硅片代替成本较高的外延硅片,采取铂扩散的方法引入复合中心,从而控制少子寿命以减少快恢复二极管的反向恢复时间.通过大量实验研究了铂扩散二极管的特性,表明在扩散时间一定的条件下,随着铂扩散温度的升高,反向恢复时间TRR呈线性下降趋势;并且相同扩散温度条件下,电阻率越小的样品TRR值越小.随着铂扩散时间的增加,TRR值逐渐减小.分析了TRR以及正向压降VF的温度特性,表明随着工作温度的升高,TRR呈上升趋势,而VF随温度的升高而下降.Expensive epitaxial wafers were replaced by lapped wafers in fast recovery diodes. Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode. The properties of platinum diffusion diode were studied by the experiments. The results show that TRR decreases linearly with diffusion temperature at an unchanged diffusion time, and the smaller resistivity, the smaller TRR. TRR will decrease as the increase of diffusion time. The temperature characteristics of TRR and forward voltage drop VF are analyzed. The results show that as the temperature increase, TRR will increase and VF will decrease respectively. The excellent selections between TRR and VF were obtained using cheap lapped wafer instead of expensive epitaxial wafer.

关 键 词：铂扩散 反向恢复时间 正向压降 漏电流 

分 类 号：TN31[电子电信—物理电子学]