用光伏谱方法研究InGaAs/GaAs应变量子阱的性质  

PHOTOVOLTAIC INVESTIGATION ON THE STRAINED InGaAs/GaAs QUANTUM WELL

作　　者：吴正云[1] 王小军[1] 余辛[1] 黄启圣[1] 

机构地区：[1]厦门大学物理系

出　　处：《物理学报》1997年第7期1395-1399,共5页Acta Physica Sinica

基　　金：国家自然科学基金;福建省自然科学基金

摘　　要：采用低温光伏谱方法，研究了应变Ｉｎ０１８Ｇａ０８２／ＧａＡｓ单量子阱结构中各子能级之间的光跃迁，并与理论计算的结果进行比较，对光伏谱的谱峰跃迁能量随温度变化的分析，表明量子阱中的应变与温度基本无关．研究了光伏谱的谱峰半高宽度随温度的变化关系．讨论了声子关联。Abstract The low temperature photovoltaic (PV) spectroscopy was used to study the optical transitions between subbands of strained In 0 18 Ga 0 82 As/GaAs quantum well,experimental results are well consistent with that of theoritical calculation. The dependence of PV peak transition energy on temperature has been analysed and the strain factor and conduction band offset Q c for quantum well have been found to be almost independent of temperature.The full width at half maxium (HWHM) of transition peaks as a function of temperature has been studied. From a good fit,we discuss the influences of the exciton phonon coupling,alloy disorder and interface roughness on the line shape.

关 键 词：低温光伏谱 铟镓砷 砷化镓 应变量子阱 

分 类 号：TN304.23[电子电信—物理电子学] O471.1[理学—半导体物理]