低压MOCVD生长GaN p-n结蓝光LED  

Fabrication of GaN p n Junction Blue LEDs by Low Pressure Metalorganic Chemical Vapor Deposition *

作　　者：张国义[1] 杨志坚[1] 金泗轩[1] 党小忠 

机构地区：[1]北京大学物理系介观物理国家重点实验室

出　　处：《物理》1997年第6期321-322,共2页Physics

摘　　要：简要报道了采用一种改进的低压金属有机物化学气相淀积（ＬＰＭＯＣＶＤ）方法制备ＧａＮｐｎ结蓝光光发射二极管（ＬＥＤ），介绍了ＬＥＤ的基本特性．这种ＬＥＤ具有良好的ＩＶ特性和光谱特性．室温下，在正向电压５Ｖ，正向电流３—２０ｍＡ的条件下，峰值波长依Ｍｇ的掺杂浓度和退火条件的不同而不同，分别在４２５ｎｍ，４３５ｎｍ和４８０ｎｍ附近，发射谱的半峰宽约为５０ｎｍ．GaN p n junction blue light emitting diodes have been fabricated using an improved type of low pressure metalorganic chemical vapor phase deposition(LP MOCVD).The diodes have good current voltage and spectra characteristics.At room temperature with a forward voltage of 5V and forward currents of 3mA to 20mA,peak wavelengths of 425nm,435nm and 480nm have been obtained,depending on the concentration of doped Mg and the annealing conditions.The full width at half maximun is about 50nm.

关 键 词：氮化镓 蓝光 LED MOCVD I-V特性 光谱特性 

分 类 号：TN383[电子电信—物理电子学]