PZT纳米晶薄膜的Sol-Gel法制备及铁电性质  

PZT FERROELECTRIC THIN FILMS WITH NANO-CRYSTALLINE BY SOL-GEL PROCESSING

作　　者：宋世庚[1] 谭辉[2] 王学燕[2] 符小荣[2] 郑立荣[1] 陶明德[2] 林成鲁[1] 

机构地区：[1]中国科学院上海冶金所功能材料国家重点实验室 [2]中国科学院新疆物理研究所

出　　处：《材料研究学报》1997年第4期392-396,共5页Chinese Journal of Materials Research

摘　　要：采用Sol-Gel法，以Zr的硝酸盐替代醇盐，引入PbTiO3过渡层的方法成功的制备了纳米晶铁电薄膜。并进行了差热、热重、结构、组分、铁电性能的测定、分析，In this paper, Pb(Zr0.5Ti0.5)O3 ferroelectric thin films with nano-crystalline have been prepared by sol-gel processing, Zr salt was ZrO(NO3)2 instead of alkoxides, and PbTiO3 film with 40 nm thickness was coated before PZT thin film was done. The results indicated that PbTiO3 thin layer is advantageous to the formation of PZT perovskite structure. RBS, TGA, DTA, structure and so on were studied, and ferroelectric properties were analyzed by C-V characteristics and Sawyer-Tower bridge.

关 键 词：铁电薄膜 PZT 纳米晶 溶胶凝胶法 薄膜 

分 类 号：TM221[一般工业技术—材料科学与工程] TB43[电气工程—电工理论与新技术]