HfO2薄膜的制备与光学性能  

Preparation and optical properties of HfO2 thin films

作　　者：刘文婷[1] 刘正堂[1] 许宁[1] 鹿芹芹[1] 闫锋[1] 

机构地区：[1]西北工业大学材料学院,陕西西安710072

出　　处：《功能材料》2007年第A01期309-311,共3页Journal of Functional Materials

基　　金：基金项目：航空科学基金资助项目（04G53043）

摘　　要：采用射频磁控反应溅射法，以高纯热压HfO2陶瓷为靶材，在Si衬底上成功制备出HfO2薄膜。系统研究了工艺参数对薄膜沉积速率的影响规律，并对薄膜的光学性能进行了研究。结果表明，射频功率对薄膜沉积速率的影响最为明显，O2／Ar流量比和衬底温度对沉积速率的作用不明显，所制备薄膜的折射率较高在近红外波段趋于1．95，在500-1650nm波段范围内薄膜几乎无吸收，透过率较高。HfO2 thin films were prepared on Si （111） substrates by RF reactive magnetron sputtering with a HfO2 ceramic disc as the target in atmosphere of Ar and O2 mixture. The effects of deposition parameters on the deposition rate were studied systematically, and the optical properties were investigated with spectroscopic ellipsometer. The results show that the influence of RF power is very remarkable on the deposition rate, the influence of O2/Ar flow ratio and substrate temperature is not clearly. The refractive and extinction indices of the HfO2 films are in the range of 2.02-1.95 and 9.57×10^-4-6.07×10^-14 respectively in the wavelength from 400 to 1650nm. The HfO2 thin films are of little absorption and high transmission in the infrared waveband.

关 键 词：磁控反应溅射 HFO2薄膜 沉积速率 光学性能 

分 类 号：TN386[电子电信—物理电子学]