后处理工艺对BST薄膜残余应力的影响的分析  

Analysis of relationships between residual stress and annealing parameter for BST thin films

作　　者：唐海军[1] 杨传仁[1] 陈宏伟[1] 张继华[1] 冯术成[1] 

机构地区：[1]电子科技大学电子薄膜重点实验室,四川成都610054

出　　处：《功能材料》2007年第A02期771-774,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划（973计划）资助项目（Z01）.

摘　　要：采用射频磁控溅射在Pt/Ti/SiO2/Si（100）衬底上制备了钛酸锶钡（BST）薄膜，利用气氛炉对薄膜进行晶化处理，晶化后薄膜的应力采用XRD表征。研究其残余应力随退火气氛、退火温度以及退火降温速率变化的趋势，通过对不同后处理工艺参数实验结果的分析，得到较优化的工艺参数，以制备较小残余应力的优质BST薄膜。（Ba,Sr）TiO3 （BST） thin films were prepared on Pt/Ti/SiO2/Si（100） substrates by RF-magnetron sputtering, And then were annealed in different oxygen ambience, temperature and speed of annealing temperature falling, respectively. The stress change of BST thin films was analyzed by XRD. Through researching the relationships between residual stress and annealihg atmosphere, temperature, lowering temperature-speed ,we have acquired optimized annealing parameters, and （Ba, Sr）TiO3 （BST） thin films , with lower residual stress and better capability, deposited on Pt/Ti/SiO2/Si（100） substrates have been achieved.

关 键 词：射频磁控溅射 钛酸锶钡薄膜 晶化 残余应力 

分 类 号：TM384[电气工程—电机]