溅射工艺及底层对SmCo薄膜磁性能的影响  被引量:2

Effect of sputtering parameters and underlayer on magnetic properties of SmCo thin films

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作  者:张峰[1] 黄致新[1] 王辉[1] 吴斌[1] 杨晓非[2] 程伟明[2] 

机构地区:[1]华中师范大学物理科学与技术学院,湖北武汉430079 [2]华中科技大学电子科学与技术系,湖北武汉430074

出  处:《功能材料》2007年第A03期1077-1079,共3页Journal of Functional Materials

基  金:湖北省自然科学基金资助项目(2005ABA041):国家自然科学基金资助项目(60571010).

摘  要:用多靶射频磁控溅射系统在玻璃基片上制备了SmCo磁性薄膜。并采用控制变量法研究了溅射功率、溅射时间以及溅射气压等工艺参数对薄膜磁性能的影响。结果发现,当磁性层溅射功率为60W,溅射气压为0.5Pa,溅射时间为8min;底层溅射功率为125W,溅射气压为0.5Pa,溅射时间为4min时,薄膜的矫顽力高达2.79×10^5。底层对SmCo薄膜的磁性能也有影响,振动样品磁强计测量结果表明:相比Cr、Ti底层,以Cu作为底层所得到的SmCo薄膜磁性能更好,薄膜矫顽力分别比用Cr、Ti作底层时高出56%,40%。SmCo magnetic thin films were prepared onto glass substrates by RF magnetron sputtering system. The effect of sputtering power , sputtering time and sputtering pressure on the magnetic properties of the thin films were investigated by the parameter control method. It is found that when the sputtering power , sputtering pressure and sputtering time of the SmCo thin films and the underlayer are 60W, 0.5Pa and 8min, 125W, 0.5Pa and 4min, respectively, the coercivity that in the plane direction is as high as 2.79 × 105 Underlayer also has effect on the properties of SmCo thin films. The VSM measurements revealed that SmCo thin films will possess better magnetic properties with Cu as underlayer than Ti and Cr. Compared with Cr and Ti as underlayer, the coercivity of SmCo thin films with Cu underlayer is higher 56% and 40%, respectively.

关 键 词:磁控溅射 SmCo薄膜 控制变量法 矫顽力 Cu底层 

分 类 号:TM271[一般工业技术—材料科学与工程]

 

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