GaN纳米棒的合成与表征  

Synthesis and characterization of GaN nanorods

作　　者：王连红[1] 梁建[1,2] 马淑芳[1,2] 万正国[1] 许并社[1,2] 

机构地区：[1]太原理工大学材料科学与工程学院,山西太原030024 [2]新材料界面科学与工程省部共建教育部重点实验室,山西太原030024

出　　处：《功能材料》2007年第A06期2278-2279,共2页Journal of Functional Materials

基　　金：基金项目：国家自然科学基金资助项目（20271037）

摘　　要：利用化学气相沉淀法（CVD）以Ga2O3和NH3为原料在沉积有乙酸镍的硅衬底上合成出了GaN纳米棒,纳米棒直径在50-200nm，长度在2-10μm，表面比较光滑,利用场发射扫描电镜（FESEM），X射线衍射仪（XRD），能量散射谱（EDS）对样品进行了成分和结构分析，表明GaN纳米棒是单晶的纤锌矿结构，同时对其生长机理进行了探讨。GaN rods were synthesized on Si substrate coating with Ni（Ac）2 through chemical vapor deposition, employing Ga2O3 and NH3 as Ga and N resources respectively. The diameter of GaN rods range from fifty nanometers to two hundred nanometers. The length of GaN is from two micrometres to ten micrometres, and the surface is smooth. The sample was tested and characterized by employing FESEM, XRD and EDS.It is indicated the sample is composed of GaN rods which belong to single crystal hexagon wurtzite structure. The growth mechanism of GaN rods is discussed.

关 键 词：氮化镓 纳米棒 化学气相沉淀 催化剂 气液固机理 

分 类 号：TN304[电子电信—物理电子学]