气相生长硒化镉单晶体的生长速度研究  

Study on CdSe single crystal growth speed with vapor phase method

作　　者：何知宇[1] 赵北君[1] 朱世富[1] 任锐[1] 温才[1] 叶林森[1] 钟雨航[1] 王立苗[1] 杨慧光[1] 

机构地区：[1]四川大学材料科学系,四川成都610064

出　　处：《功能材料》2007年第A10期4044-4046,共3页Journal of Functional Materials

基　　金：国家高技术研究发展计划（863计划）资助项目（2202AA325030）

摘　　要：以晶体生长理论为基础，计算了气相提拉生长CdSe晶体时的生长速率。结果表明用提拉法气相生长CdSe晶体时，晶体的气相生长速率将会随着时间的延长以指数关系快速的趋近于提拉速度，以后不再变化。由此，在选定温场的前提下，对CdSe单晶体的气相生长速度进行了优化，确定了3mm／d的生长速度，得到了平界面生长的尺寸为Ф20mm×30mm，电阻率高达10^9Ω·cm，且未观察到深能级陷阱的优质CdSe大单晶体.The speed of growing CdSe single crystal by using vapor phase pulling method was calculated, based on the theory of crystal growth. The results showed that the crystal growth speed exponentially approached the pulling speed quickly as the time prolonged and did not change ever since. Therefore, in the chose temperature field, the single crystal growth speed was optimized and was confirmed to be 3mm/day. High quality, large CdSe single crystals （ Ф20mm× 30mm） without obvious deep energy level trap were obtained with flat interface growth and 10^9Ω·cm high resistance.

关 键 词：CDSE 晶体生长 气相提拉 平界面 生长速度 

分 类 号：O782[理学—晶体学]