P型HgCdTe离子刻蚀成结机理分析  

Mechanism Analysis of P-HgCdTe Ion Milling Junction

作　　者：姚英[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2007年第2期71-75,共5页Infrared Technology

基　　金：国防预研基金项目

摘　　要：从微观理论对P型HgCdTe离子刻蚀成结的过程、机理进行了分析,提出HgCdTe环孔P-N结的汞原子扩散-补偿模型、P-N结的汞原子扩散-补偿-剩余施主杂质模型,提出并讨论了离子刻蚀技术形成环孔型P-N结和平面型P-N结的汞原子扩散激活能、扩散汞原子总量、扩散范围、扩散系数、有效汞原子系数等关键物理参数与工艺参数。In this dissertation, the process and mechanism of P-HgCdTe ion milling junction nave aiready been analyzed based on micro-theory. Hg-atom diffusion-compensation model and diffusion-compensation residual donor impurities model of HgCdTe loophole P-N junction are presented. Some key physical and technological parameters （such as Hg-atom diffusion activation energy, the total amount of Hg-atom, range of diffusion, diffusion coefficient, effective Hg-atom coefficient and so on.） about loophole P-N junction and planar P-N junction formed by ion milling are presented and discussed.

关 键 词：HGCDTE 环孔工艺 离子刻蚀 P-N结 

分 类 号：TN213[电子电信—物理电子学]