体晶ZnO光导探测器制备与测试  

Fabrication and Testing of Bulk ZnO Photoconductive Detector

作　　者：赵鹏[1] 周旭昌[1] 洪雁[1] 唐利斌[1] 彭曼泽[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2007年第10期567-569,共3页Infrared Technology

基　　金：云南省自然科学基金项目(2004F0474M);云南省自然科学基金项目(2004E0055M)

摘　　要：在体单晶ZnO的Zn面和O面通过直流溅射金属薄膜,并采用剥离电极成型方法制备梳妆电极,从而制备出体晶ZnO紫外光导探测器。对Pt/ZnO/Pt的伏安特性测试研究表明,金属Pt和ZnO形成很好的欧姆接触,而Zn面的器件电阻明显低于O面的器件电阻。对制成的紫外探测器的光电性能测试表明,器件制备极性面的选择,测试的调制频率、偏置电压对器件的性能有较大影响,最终器件的电流响应率达到14.6A/W。ZnO photoconductive UV detectors based on bulk ZnO single crystal as MSM structure with interdigital （IDT） configuration were fabricated by the lift-off technology. The Pt film as ohm contact was deposited on the Zn-face and O-face of the ZnO by the DC sputtering. The I-V characteristic of the detector indicated that good ohmic behavior between Pt and ZnO was formed, and the devices on the Zn-face was better than the those on the O-face. The UV photoresponsivity of the detector showed that the polar face for device fabrication, modulate frequency and bias voltage influence the performance of the ZnO photoconductive detector, and a responsivity of the 14.6A/W under ultraviolet illumination was achieved.

关 键 词：ZnO体晶 光电导紫外探测器 欧姆接触 响应率 

分 类 号：TN957.52[电子电信—信号与信息处理]