用VHF-PECVD技术研制大面积均匀硅基薄膜  

LARGE AREA Si-BASED THIN FILMS DEPOSITED BY VHF-PECVD

作　　者：薛俊明[1] 侯国付[1] 王凯杰[1] 孙建[1] 任慧志[1] 张德坤[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,天津300071

出　　处：《太阳能学报》2007年第11期1227-1232,共6页Acta Energiae Solaris Sinica

基　　金：国家重点基础研究发展规划"973"(No.2006CB202602;2006CB202603);天津市科技发展计划项目(06YFGZGX02100);天津市自然科学基金项目(No.043604911)

摘　　要：首先对电极表面VHF频段电场分布进行了详细的物理分析,认为当激发频率在VHF频段时驻波和损耗波对电场均匀性分布影响很大,而通过选择不同的电源馈入方式可减小其影响。采用中心馈入法,对馈线和电极的连接方式进行了仔细研究,然后就工作压力、沉积功率、流量等工作参数对均匀性、沉积速率、材料特性的影响进行了研究。结果表明:在本文所研究的范围内,适当提高工作气压可以提高薄膜的均匀性,而功率的变化对均匀性影响不大;在一定范围内提高工作气压和功率都可提高沉积速率;从薄膜的质量来说,气压低时较好,而功率则应适当选择。通过优化沉积条件,我们在普通浮法玻璃上制备出了面积为23×24cm^2,厚度不均匀性为±1.4%,最高沉积速率达10.5/s,光敏性最大为2.25×10~5的a-Si:H薄膜材料。In this paper, the feeding line was connected at the center of the electrode with different connection methods during deposition in order to investigate the effect of connection methods of the feeding line at the electrodes on the uniformity of large area a-Si：H film. The affects of the gas pressure, flow rate and power on the uniformity, deposition rate and the character of the materials were also studied. It was found that to increase the gas pressure properly can increase the uniformity of the films, but the changes of the power have little effect to the uniformity. The deposition rate increases with properly increasing the gas pressure and the power. When the gas pressure is low, the quality of the thin films is good. So the power density should be properly selected to obtain high quality thin films. By optimizing, a film with the area of 23 × 24cm^2, non-uniformity of ± 1.4%, deposition rate of 10.5A/s and photosensitivity of 2.25 × 10^5 was achieved.

关 键 词：VHF-PECVD 硅基薄膜 大面积均匀性 电源馈入方式 

分 类 号：TM615[电气工程—电力系统及自动化]