硅粉在直流氩等离子体中的刻蚀提纯  

Etching Purification of Si Particulates in DC Ar Plasma

作　　者：尹盛[1] 王敬义[1] 李战春[1] 张繁[1] 沈亮[1] 赵伯芳[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《稀有金属材料与工程》2007年第A03期547-550,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(10475029)

摘　　要：介绍了一种用直流氩等离子体对硅粉刻蚀提纯的方法。实验结果表明硅粉纯度可由99.6%提高到99.95%。处理后的硅粉还可进行熔化—固化—粉碎再处理,因此这是一种技术上可行的太阳级硅制备新方法。文中还应用反应室鞘层厚度、硅粉沉降平均速度、考虑高能中性粒子刻蚀作用的刻蚀速率方程等进行理论分析,结果显示,在一定的工艺参数下,刻蚀提纯是有效的,并与实验结果相近。这也为粉体表面刻蚀研究提供了一种新的手段。A kind of method of using DC Ar plasma etching for the purification of Si particulates is introduced. The results show that the purity of Si powder can be increased from 99.6% to 99.95%. The etched Si particulates can be treated again after melting-solidifying-pulverizing. Hence, it is technologically feasible for the production of low-cost solar-grade Silicon material. The equations of the sheath thickness, the particulate average drop velocity and the etching rate of ions and energetic neutrals are provided for theoretic analyses, The results of the analysis and calculation show that the etching purification is effective with moderate technology parameters. The theoretic results agree with the test results roughly, which provides a new method for surface etching research of particulates.

关 键 词：粉粒表面刻蚀 刻蚀提纯 太阳级硅 直流等离子体 

分 类 号：TN304.051[电子电信—物理电子学]