硅基氮化铝薄膜的AFM和XPS分析  

AFM and XPS Analysis of the AlN Thin Film on the Si Substrate

作　　者：刘文[1] 王质武[1] 杨清斗[1] 卫静婷[1] 

机构地区：[1]深圳大学光电子学研究所广东省光电子器件与系统重点实验室光电子器件与系统教育部重点实验室,广东深圳518060

出　　处：《压电与声光》2007年第6期723-725,共3页Piezoelectrics & Acoustooptics

基　　金：留学回国人员科研启动基金资助项目(教外司留2001-498)

摘　　要：在Si(111)基底上利用直流磁控溅射系统沉积氮化铝(AlN)薄膜,X-射线衍射分析薄膜结构和取向,原子力显微镜分析薄膜表面形貌,X-射线光电子能谱分析薄膜的元素化学价态和组分。结果表明,生长的AlN薄膜具有良好的(100)择优取向,其半峰宽为0.3°。薄膜表面粗糙度为0.23 nm,表面均方根粗糙度为0.30 nm,z轴方向最高突起约3.25 nm。薄膜表面组分为Al、N、O、C元素,其中C、O主要以物理吸附方式存在于薄膜表面,而Al、N元素的存在方式主要是Al—N化合物,深度剥蚀分析表明获得的AlN薄膜接近其化学计量比。Aluminum nitride thin film has been deposited on Si（111） substrate by using a DC magnetron sputtering system. The crystalline structure and orientation of the AIN film were studied by X ray diffraction （XRD）. Surface morphology of the film was observed by atomic force microscopy （AFM）. The surface compositions and chemical environments of the film were characterized by X-ray photoelectron spectroscopy （XPS）. The film shows a excellent preferred orientation of （100） and its＇ FWHM is 0.3°. Surface roughness parameters were Rx=0.23 nm, RMS=0. 30 nm and Rx=3.25 nm. XPS data show that AI, N,C,O elements were existed on the surface of the AIN film. Cls and Ols binding energy indicate that the two elements mainly existed by physically adsorbed. Al2p and N1s binding energy prove the formation of the AIN film. The XPS depth profile analysis indicates that the film present a composition highly close to AlN stoichiometric.

关 键 词：氮化铝 直流磁控溅射 原子力显微镜 X射线光电子能谱 化学计量比 

分 类 号：O484[理学—固体物理]