双槽电化学腐蚀法制备多孔硅的研究  

Study on Preparing Porous Silicon by Double-cell Electrochemistry Etching

作　　者：张萍[1] 娄利飞[1] 柴常春[1] 杨银堂[1] 

机构地区：[1]西安电子科技大学微电子所宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《压电与声光》2007年第6期740-742,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(90207022)

摘　　要：论述了多孔硅的特点和制备方法,简单介绍双槽电化学腐蚀法的特点,并采用双槽电化学腐蚀法成功制备了多孔硅。多孔硅的扫描电镜(SEM)照片表明,孔径尺寸小,均匀性好,腐蚀结构规则。实验结果表明,衬底导电类型影响着多孔硅的制备条件。The characteristic and preparing of porous silicon were discussed. The porous silicon was successfully prepared by double-cell electrochernical etching. The SEM photos of porous silicon prepared by double-cell electrochernical etching were observed. The results show that the porous silicon obtained by this method has the smaller hole diameter , good uniformity, ordered etching structure. The type of substrate affect the condition of the porous silicon preparation.

关 键 词：牺牲层 多孔硅 双槽电化学腐蚀法 

分 类 号：TN304.05[电子电信—物理电子学]