制备工艺及参数对TbCo薄膜垂直磁各向异性能的影响  

Influence of Processing and Parameters on the Perpendicular Magnetic Anisotropy Energy of TbCo Films

作　　者：黄致新[1] 章平[1] 张玉龙[1] 王辉[1] 吴斌[1] 张锋[1] 李佐宜[2] 

机构地区：[1]华中师范大学,湖北武汉430079 [2]华中科技大学,湖北武汉430074

出　　处：《稀有金属材料与工程》2007年第11期1947-1950,共4页Rare Metal Materials and Engineering

基　　金：湖北省自然科学基金资助项目(2005ABA041)

摘　　要：采用射频磁控溅射法制备了TbCo非晶垂直磁化膜,并就制备工艺及参数对其磁各向异性能的影响进行了研究。结果表明:磁性层组分、溅射气压、基片偏压以及后退火温度对TbCo非晶垂直磁化膜的磁各向异性能都有不同程度的影响。当Tb含量为30%左右,或溅射气压为0.53Pa时,TbCo薄膜的磁各向异性能Ku会呈现极大值。基片偏压超过–60V以后,TbCo薄膜Ku值开始显著上升,但超过–120V以后,Ku值开始趋向饱和。200℃以上真空退火会使TbCo薄膜磁各向异性能Ku值明显下降。产生这些现象的原因与薄膜微观结构的改变有关。The amorphous TbCo films with perpendicular anisotropy have been prepared and the influences of processing parameters on the magnetic anisotropy energy are investigated. The results showed that the magnetic anisotropy of the TbCo films could be greatly influenced by the factors, such as composition, sputtering pressure, substrate biased voltage and post-annealing temperature. When the concentration of Tb is around 30%, or the sputtering pressure is 0.53 Pa, the maximum Ku value can be obtained. When the substrate biased voltage exceeded -60 V, the Ku value increases obviously. But if the biased voltage exceeded -120 V, the Kuvalue tends to be saturated. The Ku value decreases obviously by vacuum post-anneal at or above 200 ℃ for the TbCo thin film due to the microstructure change.

关 键 词：TbCo薄膜 磁各向异性 磁控溅射 工艺参数 

分 类 号：O484.43[理学—固体物理]