非晶硅基薄膜的等离子体刻蚀光发射谱检测  

A STUDY OF OPTICAL EMISSION SPECTRVM OF R. F. PLASMA DURING AMORPHOOS SILICON BASED FILM ETCHING

作　　者：王长安[1] 徐重阳[1] 赵伯芳[1] 于天洪[1] 

机构地区：[1]华中理工大学固体电子学系,武汉430074

出　　处：《微细加工技术》1997年第2期37-42,共6页Microfabrication Technology

摘　　要：本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。In this paper, The coherent detection technique using a lock-in amplifief and the detection system for plasma optical emission spectrum are studied. The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected. The detected results and etching mechanisms are analysed.

关 键 词：非晶硅基薄膜 等离子体刻蚀 光发射谱检测 

分 类 号：TN405.982[电子电信—微电子学与固体电子学]