退火对高Al组分AlGaN P-I-N二极管光电性能的影响  

The Infiuence of Annealing Process on the Performance of AlGaN P-I-N Photodiodes with High Al Fraction

作　　者：赵鸿燕[1] 司俊杰[1] 鲁正雄[1] 成彩晶[1] 丁嘉欣[1] 张亮[1] 陈慧娟[1] 

机构地区：[1]中国空空导弹研究院,河南洛阳471009

出　　处：《激光与红外》2007年第12期1283-1286,共4页Laser & Infrared

摘　　要：研究了不同条件下的退火对高Al组分AlGaN P-I-N二极管性能的影响。研究结果表明,合适的退火条件既能使AlGaN与电极之间形成良好的欧姆接触,同时又能显著降低AlGaNP-I-N二极管的反向漏电流,反偏压5V时,暗电流密度由2.0×10-1A/cm2降为5.7×10-5A/cm2,串阻由18.01kΩ减小到1.071kΩ,从而优化了AlGaN P-I-N二极管的I-V特性。分析认为这与退火改善接触电极特性,同时消除器件制备工艺中引入的损伤、降低缺陷态密度有关。Effect of the different annealing conditions on the Ⅰ-Ⅴcharacteristics of AlGaN with high Al fraction P-I-N photodiodes has been investigated. The result shows, by using an optimised annealing process, not only a good ohmic contact between AlGaN and metal electrode has been obtained, but also the reverse current of the AlGaN P-I-N diode was reduced apparently. At -5V bias, the dark current density and series resistance of diode decreased from 2.0 × 10^-1A/cm^2 to 5.7 × 10^-5A/cm^2 and from 18.01kΩ to 1. 071kΩ individually. Ⅰ-Ⅴ characteristic of AlGaN P-I-N device shows improved. It is believed the improvement relates with optimizing of contact properties, elimination of damage induced by device technics and reduction of defect density during annealing process.

关 键 词：ALGAN P—I—N二极管 退火 欧姆接触 工艺损伤 

分 类 号：TN23[电子电信—物理电子学]