用X射线反射测量法表征双层结构中低原子序数材料的特性(英文)  

Characterization of low-Z material layer profiles in bilayer structures by X-ray reflectivity measurement

作　　者：徐垚[1] 王占山[1] 徐敬[1] 张众[1] 王洪昌[1] 朱京涛[1] 王风丽[1] 王蓓[1] 秦树基[1] 陈玲燕[1] 

机构地区：[1]同济大学精密光学工程技术研究所,上海200092

出　　处：《光学精密工程》2007年第12期1838-1843,共6页Optics and Precision Engineering

基　　金：Supported by the National Natural Science Foundation of China( No 60378021 and 10435050);the Programfor New Century Excellent Talents in University(No NCET-04-0376)

摘　　要：介绍了用X射线反射测量术表征双层薄膜中低原子序数材料特性的方法。由于低原子序数材料的光学常数与Si基板材料的光学常数非常接近,用X射线反射法确定镀制在Si基板上的低原子序数材料膜层结构的变化十分困难,因此,提出了在镀制低原子序数材料前,首先在基板上镀制一层非常薄的金属层的方法。实验中,选用Cr作为金属层材料,制备并测试了三种不同C膜镀制时间的Cr/C双层薄膜。反射率曲线拟合结果表明,C膜密度约为2 .25 g/cm3,沉积速率为0 .058 nm/s。A convenient method, low-angle X-ray reflectivity measurement method, is presented to characterize the parameters of low-Z material layers in bilayer structures using X-ray diffractometer （XRD）. Because the low-Z material optical constant is similar to the silicon （Si） substrate, the change of the low-Z material layer profiles is difficult to determine. Therefore, an ultra-thin metal layer is deposited as the Base Layer （BL） onto the substrate prior to the low-Z material layer. By choosing chromium （Cr） as the BL material, three Cr/C bilayer films with different C deposition times are fabricated and measured. After the simulation of the reflectivity curves, the density of C is approximately 2.25 g/cm^3 , while the deposition rate of C layer is 0.058 nm/s under our laboratory conditions.

关 键 词：X射线衍射仪 低原子序数材料 反射率测试 薄膜 

分 类 号：O434.12[机械工程—光学工程] O484.5[理学—光学]