介电常数失配对InAs/GaAs应变量子阱中浅施主结合能的影响  

EFFECT OF THE DIELECTRIC CONSTANT MISMATCH ON THE BINDING ENERGIES OF SHALLOW DONOR IN InAs/GaAs STRAINED QUANTUM WELL

作　　者：邢金海[1,2] 黄和鸾[1,2] 

机构地区：[1]辽宁大学物理系 [2]辽宁大学电子科学与工程系

出　　处：《功能材料与器件学报》1997年第3期187-192,共6页Journal of Functional Materials and Devices

摘　　要：研究了介电常数失配对ＩｎＡｓ／ＧａＡｓ应变量子阱中浅施主结合能的影响。在有效质量近似下，利用变分方法计算了结合能随阱宽和杂质位置的变化。计算结果表明，介电常数失配对结合能的影响很大，这与前人的工作相符合，但晶格常数失配产生的应变对结合能的影响很小，并可以忽略。The present work investigates the effect of the dielectric constant mismatch on the binding energies of shallow donor in InAs/GaAs strained quantum well. In the framework of the effective mass approximation, the binding energies are calculated as a function of the well width and the impurity position by using a variational method. The calculated results show that the effect of the dielectric constant mismatch is considerable, which is in agreement with previous work, and that the effect of strain due to lattice constant mismatch is very small and negligible.

关 键 词：量子阱 浅施主 结合能 介电常数 砷化铟 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]