硅基PZT压电薄膜微开关的设计和制作  

Design and Fabrication of PZT Piezoelectric Thin Film Micro-switch based on Silicon

作　　者：娄利飞[1] 杨银堂[1] 李跃进[1] 

机构地区：[1]西安电子科技大学微电子学所/宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《功能材料与器件学报》2007年第6期609-614,共6页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.90207022);武器装备预研基金(No.51411040105DZ0141)

摘　　要：对硅基锆钛酸铅(PZT)压电薄膜微开关进行了结构和版图设计,根据MEMS加工工艺和标准硅基IC工艺的特点,获得了硅基PZT压电薄膜微悬臂梁结构系统工艺流程中的关键工艺技术和典型工艺条件,对多孔硅的选择性生长进行了较为详细的实验研究,最后成功的制备出硅基PZT压电薄膜做开关样品,这对集成化芯片系统的进一步发展打下了必要的良好的实验基础。The structure and territory designments of PZT piezoelectric thin film micro - switch have been processed. Basing on the techniques traits of MEMS process and standard IC based on silicon, the key techniques and type technical conditions have been obtained in cause of system technical flow of PZT piezoelectric thin film micro - cantilever beam based silicon. At the same time, the preparation techniques of PS （ porous silicon） have been investigated by means of experiment. At last the sample of PZT piezoelectric thin film micro - switch has been successfully etched and laid so lid experiment foundations for the research and development of the system on chip （SOC）.

关 键 词：锆钛酸铅(PZT) 压电薄膜 微开关 多孔硅 

分 类 号：TN405[电子电信—微电子学与固体电子学]