CdSe晶片的红外透过率研究  

Study on IR Transmittance of CdSe Wafer

作　　者：何知宇[1] 赵北君[1] 朱世富[1] 叶林森[1] 钟雨航[1] 王立苗[1] 杨慧光[1] 曾体贤[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2007年第6期1211-1214,共4页Journal of Synthetic Crystals

基　　金：国家863计划(No.2202AA325030)

摘　　要：将经过多级提纯、垂直无籽晶气相输运法生长的CdSe晶锭切割,获得沿生长轴向分布的1.3mm厚晶片系列,采用日本SH IMAZU公司的IRpresting-21傅立叶变换红外光谱仪、ZC36型高阻仪及X射线能谱仪对该晶片组的红外透过率、电阻率、成份百分含量进行了测试,依据晶片对红外光的吸收机理,讨论了CdSe晶片在中红外区域透过率的理论值和影响其红外透过率的主要因素,研究了红外透过率与晶片性能的内在联系,为探测器级CdSe晶片的筛选提供了一种简便有效的方法。Cutting the CdSe crystal grown by multi-step purification and vertical vapor phase transmission method, a series of 1. 3mm thick wafers distributed along the growth axes were obtained. The IR transmittance, resistivity and component content of this group wafers were measured with SHIMAZU eter, ZC36 megger and EDS. Based on the IR absorbing mechanism, CdSe crystal＇s transmittance in theory and the main factors that affect its transmittance was discussed. The inner relationship between IR spectrum and the wafers＇ quality was analyzed. An effective way for choosing CdSe wafers of detector level was provided.

关 键 词：探测器材料 CdSe单晶体 红外光谱 吸收机制 

分 类 号：O782[理学—晶体学]