高k材料用作纳米级MOS晶体管栅介质薄层(上)  

High-k Replacement of Ultrathin Gate Dielectrics for Nanoscale MOS Transistors(Ⅰ)

作　　者：翁妍[1] 汪辉[1] 

机构地区：[1]上海交通大学微电子学院,上海200030

出　　处：《半导体技术》2008年第1期1-5,共5页Semiconductor Technology

基　　金：国家自然科学基金(NSFC60606015);上海市浦江人才计划项目(05PJ14068)

摘　　要：随着45 nm和32 nm技术节点的来临,传统的SiO2作为栅介质薄膜材料的厚度需缩小到1 nm之下,材料的绝缘性、可靠性等受到了极大的挑战,已不能满足技术发展的要求。高k材料成为代替SiO2作为栅介质薄层材料的不错选择,但是大多数高k材料是离子金属氧化物,其基本物理和材料特性导致产生很多不可靠因素。从高k材料的基本物理和材料特性角度,回顾了高k材料代替SiO2用作纳米级MOS晶体管栅介质薄层时产生的主要不可靠因素及根本原因。With the coming of 45 nm and 32 nm technology, high-k materials could be good alternatives of SiO2 gate dielectric. But most of the high-k materials are ionic metal oxides. The fundamental physics and material properties cause several undesirable reliability problems as well as the degradation of electrical performance. The relationships between some electrical characteristics, such as leakage current, mobility and its physics and material properties are discussed. Especially the detection of the defects in high-k dielectrics by frequency dependent charge pumping technology is introduced. The main drawbacks and fundamental limitations of high-k gate dielectric are reviewed and the possible solutions are listed.

关 键 词：栅介质薄层 高介电常数 可靠性 

分 类 号：TN304[电子电信—物理电子学] TN386.1