高压IGBT制造技术的最新动向  

Recent Tendency of High Voltage IGBTs Manufacture

作　　者：张昌利[1] 陈治明[2] 

机构地区：[1]西安电力电子技术研究所 [2]西安理工大学

出　　处：《半导体情报》1997年第5期46-50,共5页Semiconductor Information

摘　　要：阐述了当前２．５～４．５ｋＶ高压ＩＧＢＴ的最新制造技术和典型器件结构，认为高压大电流ＩＧＢＴ器件的开发成功将为未来电力电子技术的发展提供新的机遇和挑战。The manufacture and device structure with 2 5～4 5kV high voltage IGBTs were reviewed in this paper.It has considered that the development of power IGBT would bring opportunity and challenge to the development of power electronics in the near future.

关 键 词：电力电子技术 绝缘栅 双极型晶体管 IGBT 

分 类 号：TN322.8[电子电信—物理电子学]