偏压值对纳米刻蚀影响的研究  

A study of voltage offset influence on nanometer lithography

作　　者：周光茜[1] 张英堂[1] 任永强[1] 

机构地区：[1]西安工程大学理学院,陕西西安710048

出　　处：《纺织高校基础科学学报》2007年第4期408-411,共4页Basic Sciences Journal of Textile Universities

摘　　要：STM的刻蚀机理是通过隧道电流引发局域化学反应,以达到刻蚀的目的.在刻蚀过程中,偏压值对针尖状态的影响相当大.本文以STM为手段,研究偏压值对高序石墨表面纳米刻蚀及针尖状态的影响.通过一系列改变偏压值的纳米刻蚀试验,结果表明,在偏压值为4000mV不但刻蚀图像明显,而且对针尖状态的影响较少.The working mechanism of STM is to achieve nanometer lithography, using tunnel current to cause partial chemical reaction. During the process of nanometer lithography, voltage offsets have great effects on the state of the needlepoint. Voltage offset influence of the nanometer lithography of the surface of HOPG （highly oriented pyrolytic graphite） and the state of the needlepoint has been inspected by way of STM. The results of a series of nanometer lithography tests with various voltage offsets show that nanometer lithography image can be achieved with the least influence on the state of the needlepoint when the voltage offset equals 4000mV distinct.

关 键 词：STM 纳米刻蚀 偏压值 高序石墨 

分 类 号：O57[理学—粒子物理与原子核物理]