CVD-W晶粒取向和晶界结构的EBSD研究  

EBSD study of CVD-W grain orientation and grain boundary

作　　者：孙红婵[1] 李树奎[1] 候岳翔[1] 鲁旭东[1] 郭伟[1] 

机构地区：[1]北京理工大学材料科学与工程学院,北京100081

出　　处：《中国体视学与图像分析》2007年第4期286-288,共3页Chinese Journal of Stereology and Image Analysis

摘　　要：采用电子背散射衍射技术(EBSD)测定了化学气相沉积纯钨(CVD-W)的晶粒取向和晶界分布特征,研究化学气相沉积方法制备纯钨的组织和晶界结构的特点。测试结果表明:CVD-W生长组织具有三个生长区,分别是等轴晶区、混合生长晶区和柱状晶区;柱状晶区的晶粒具有显著的〈001〉择优生长;低∑CSL晶界占据较大比例,其中以∑3、∑5为主要结构,∑3的出现频率最大。研究认为CVD-W的晶粒取向和晶界结构特点与沉积组织的生长特点密切相关。The EBSD technology was used for determining the grain orientation and the structure of grain boundary, in order to obtain their characteristics of CVD-W. The test result shows that there are three growing zones in micro-structure of CVD-W ： region of equiaxed grain, region of mixed grain and region of columnar grain. In region of columnar grain, preferred orientation growth is obvious. Obviously preferred orientation on （001） was confirmed by the anti-pole figure. Besides, the CSL grain boundary such as ∑3, ∑5 and so on are observed. Among these kinds of boundaries, the ∑3 boundary has the highest frequency. The characteristics of grain orientation and the structure of grain boundary of CVD-W should be related to the structure growning characteristics.

关 键 词：晶粒取向 晶界结构 CVD EBSD 

分 类 号：TG111[金属学及工艺—物理冶金]