高浓度掺铒硅的结构分析  

Study on Structures of Highconcentration Erbiumdoped Silicon Luminescent Thin Films

作　　者：徐鹏[1] 王应民[1] 徐飞[1] 张萌[1] 

机构地区：[1]南昌大学材料科学与工程学院

出　　处：《南昌大学学报（理科版）》2007年第6期560-563,共4页Journal of Nanchang University(Natural Science)

基　　金：江西省材料中心基金资助项目(ZX200401007;KG200201013);江西省教育厅赣教技字资助项目([2005]160)

摘　　要：采用金属蒸气真空弧(MEVVA)离子注入机,合成获得高浓度掺铒硅发光薄膜,并对其进行成分和结构分析。在小束流2.5μA.cm-2、小注量5×1016cm-2的注入条件下,Er注入单晶硅,随着退火温度升高,存在Er析出,且析出量增多。相同束流条件下,增大Er的注量也会导致Er析出,甚至出现ErS i2相。Er - doped Si thin films performed on metal vapor vacuum arc ion source implanter have been investigated by Rutherford backscattering and X - ray diffract meter. The solubility, segregation and precipitation behavior of Er in Er - doped Si thin films was studied under various conditions of ion implantation and rapid thermal annealing. At lower implant dose （ ≤5 × 10^16 cm^-2 ） and weak flux （ ≤2.5 μA · cm^-2 ） of Er ions segregation and precipitation （ ErSi2 phase） were found obviously in as - implanted samples and in annealed samples. With increasing of an- nealed temperature, Er ions segregation were found and amount of Er ions segregation increased. Precipitation （ ErSi2 phase） were found obviously at high implant dose of Er.

关 键 词：掺铒硅 离子注入 MEVVA XRD 

分 类 号：TN305.3[电子电信—物理电子学]